Datasheet > 1N4148M

1N4148M

更新时间： 2023-12-06 20:02:06

品牌	Logo	应用领域
先科 - SWST		开关小信号开关二极管
页数	文件大小	规格书
2页	520K
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小信号开关二极管

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1N4148M 数据手册

1N4148M

Silicon Epitaxial Planar Switching Diode

Max. 0.45

Min. 27.5

Max. 2.9

Min. 27.5

Max. 1.9

Black

Cathode Band

Applications

Black

Part No.

XXX

• High-speed switching

Glass Case DO-34

Dimensions in mm

Absolute Maximum Ratings (T_a= 25

Parameter

)

Symbol

V_RM

V_R

Value

Unit

Peak Reverse Voltage

Reverse Voltage

Average Rectified Forward Current

Surge Forward Current at t < 1 s

Power Dissipation

I_F(AV)

I_FSM

P_tot

130

500

400

Junction Temperature

T_j

200

Storage Temperature Range

T_stg

- 65 to + 200

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

438

Unit

Thermal Resistance Junction to Ambient Air ¹⁾

¹⁾Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

Characteristics at T_a= 25

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 µA

Forward Voltage

at I_F= 100 mA

V_F

I_R

1.1

0.5

Reverse Leakage Current

at V_R= 50 V

μA

Capacitance

at V_R= 0, f = 1 MHz

C_tot

t_rr

Reverse Recovery Time

at I_F= 10 mA, I_rr= 0.1 x I_R, V_R= 6 V, R_L= 100 Ω

1 / 2

Dated : 19/10/2022 Rev: 02

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