Datasheet > 1N3611GP-HE3/54

1N3611GP-HE3/54

更新时间： 2024-11-20 14:39:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	72K
描述
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode

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1N3611GP-HE3/54 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-41
包装说明：	ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.68
Is Samacsys：	N	Base Number Matches：	1

1N3611GP-HE3/54 数据手册

1N3611GP thru 1N3615GP, 1N3957GP

Vishay General Semiconductor

Glass Passivated Junction Rectifier

FEATURES

• Superectifier structure for high reliability

application

SUPERECTIFIER^®

DO-204AL (DO-41)

• Cavity-free glass-passivated junction

• Low forward voltage drop

• Low leakage current, I_Rless than 0.1 μA

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes application

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

MECHANICAL DATA

V_RRM

I_FSM

I_R

200 V to 1000 V

30 A

Case: DO-204AL, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

1.0 μA

V_F

1.0 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

T_Jmax.

175 °C

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted) ⁽¹⁾

PARAMETER

SYMBOL 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3957GP UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC blocking voltage

1000

Maximum average forward rectified current

0.375" (9.5 mm) lead length at T_A= 75 °C

I_F(AV)

1.0

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

°C

Note

(1)

JEDEC registered values

Document Number: 88502

Revision: 15-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

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与1N3611GP-HE3/54相关器件

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1N3611JANTX	MICROSEMI	获取价格	VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS
1N3611R	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 1A, Silicon, GLASS PACKAGE-2
1N3611S	SENSITRON	获取价格	Rectifier Diode, 1 Element, Silicon
1N3611TR	CENTRAL	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon,
1N3611X	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 1A, Silicon, GLASS PACKAGE-2
1N3612	SENSITRON	获取价格	HERMETIC AXIAL LEAD RECTIFIER
1N3612	EIC	获取价格	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N3612	CENTRAL	获取价格	GLASS PASSIVATED GENERAL PURPOSE SILICON RECTIFIERS 1.0 AMP, 200 THRU 1000 VOLTS
1N3612	NJSEMI	获取价格	General Purpose Rectifiers in A Bodt Package
1N3612	SEMTECH	获取价格	Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode

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