生命周期: | Obsolete | 包装说明: | O-XALF-W2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.21 | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | O-XALF-W2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -65 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | ROUND |
封装形式: | LONG FORM | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | AXIAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N3611TR | CENTRAL |
获取价格 |
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, | |
1N3611X | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 1A, Silicon, GLASS PACKAGE-2 | |
1N3612 | SENSITRON |
获取价格 |
HERMETIC AXIAL LEAD RECTIFIER | |
1N3612 | EIC |
获取价格 |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS | |
1N3612 | CENTRAL |
获取价格 |
GLASS PASSIVATED GENERAL PURPOSE SILICON RECTIFIERS 1.0 AMP, 200 THRU 1000 VOLTS | |
1N3612 | NJSEMI |
获取价格 |
General Purpose Rectifiers in A Bodt Package | |
1N3612 | SEMTECH |
获取价格 |
Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode | |
1N3612 | MICROSEMI |
获取价格 |
MILITARY RECTIFIERS | |
1N3612GP | TAYCHIPST |
获取价格 |
Glass Passivated Junction Rectifier | |
1N3612GP | VISHAY |
获取价格 |
GLASS PASSIVATED JUNCTION RECTIFIER |