Datasheet > 1N3612GP

1N3612GP

更新时间： 2024-11-24 12:50:43

品牌	Logo	应用领域
台芯 - TAYCHIPST		二极管
页数	文件大小	规格书
2页	1875K
描述
Glass Passivated Junction Rectifier

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中文翻译

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数据手册

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1N3612GP 数据手册

1N3611GP THRU 1N3614GP,1N3957GP

200V-1000V

1.0A

Glass Passivated Junction Rectifier

FEATURES

• Superectifier structure for high reliability

• Cavity-free glass-passivated junction

• Low forward voltage drop

application

• Low leakage current, I_Rless than 0.1 μA

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

MECHANICAL DATA

Case: DO-204AL, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

3611GP

3612GP

3613GP

3614GP

3957GP

UNITS

Volts

Amps

Maximum repetitive peak reverse voltage

Maximum RMS voltage

200

140

200

400

280

400

600

420

600

800

1000

700

RRM

RMS

560

Maximum DC blocking voltage

800

1000

Maximum average forward rectified current

0.375" (9.5mm) lead length at T_A=75°C

I_(AV)

1.0

Amps

8.3ms single half sine-wave superimposed

on rated load (JEDEC Method)

I_FSM

30.0

1.0

Maximum instantaneous forward voltage at 1.0A

_A=25°C

V_F

I_R

Volts

1.0

300.0

µA

at rated DC blocking voltage

T_A=150°C

Typical reverse recovery time _{(NOTE 1)}

Typical junction capacitance _{(NOTE 2)}

Typical thermal resistance _{(NOTE 3)}

t_rr

2.0

8.0

µs

C_J

R_ΘJA

R_ΘJL

55.0

25.0

°C/W

°C

Operating junction and storage temperature range

T_J, T_STG

-65 to +175

NOTES:

(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, I_rr=0.25A

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts

(3) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted

* JEDEC registered values

E-mail: sales@taychipst.com

Web Site: www.taychipst.com

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与1N3612GP相关器件

型号	品牌	获取价格	描述	数据表
1N3612GP/100	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N3612GP/4F	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N3612GP/51	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N3612GP/53	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N3612GP/54	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N3612GP/56	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N3612GP/58	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N3612GP/60	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N3612GP/64	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N3612GP/65	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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