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1N3595UR-1 PDF预览

1N3595UR-1

更新时间: 2024-11-09 23:18:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管
页数 文件大小 规格书
2页 131K
描述
Standard Rectifier (trr more than 500ns)

1N3595UR-1 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:HERMETIC SEALED, GLASS PACKAGE-2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.22Is Samacsys:N
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.68 V
JEDEC-95代码:DO-213AAJESD-30 代码:O-LELF-R2
JESD-609代码:e0湿度敏感等级:1
最大非重复峰值正向电流:0.5 A元件数量:1
端子数量:2最高工作温度:175 °C
最大输出电流:0.15 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:125 V
最大反向恢复时间:3 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N3595UR-1 数据手册

 浏览型号1N3595UR-1的Datasheet PDF文件第2页 
Low Leakage Diode  
DO-35 Glass Package  
1N3595  
Applications  
Used in instrumentation applications, where low leakage and high voltage  
isolation are important.  
Features  
DO-35 Glass Package  
(nominal dimensions)  
Six sigma quality  
Metallurgically bonded  
glass  
0.020"  
0.50 mm  
BKC's Sigma Bond™ plating  
for problem free solderability  
LL-34/35 MELF SMD available  
Full approval to Mil-S-19500/241  
Available up to JANTXV-1 levels  
chip  
1.0"  
25.4 mm  
(Min.)  
Length  
0.145"  
3.7 mm  
Dia.  
0.070"  
1.8 mm  
"S" level screening available to Source Control Drawings using a  
DO-35 tungsten, hard glass voidless package for Space applications  
Maximum Ratings  
Symbol  
PIV  
Value  
150 (Min.)  
150  
Unit  
Peak Inverse Voltage  
Volts  
AverageRectifiedCurrent  
IAvg  
mAmps  
mAmps  
Amps  
Continuous Forward Current  
IFdc  
150  
Peak Surge Current (tpeak = 1 µsec.)  
BKC Power Dissipation @ TL =50 oC, L= 3/8" from body  
Storage & Operating Temperature Range  
Ipeak  
4.0  
Ptot  
500  
mWatts  
o
TSt & Op  
Minimum  
0.52  
-65 to +200  
Maximum  
0.68  
C
Electrical Characteristics @ 25oC  
Forward Voltage Drop @ IF = 1 mA  
Forward Voltage Drop @ IF = 5 mA  
Forward Voltage Drop @ IF = 10 mA  
Forward Voltage Drop @ IF = 50 mA  
Forward Voltage Drop @ IF = 100 mA  
Forward Voltage Drop @ IF = 200 mA  
Reverse Leakage Current @ VR = 125 V  
Reverse Leakage Current @ VR = 125 V  
Capacitance @ VR = 0 V, f = 1mHz  
Reverse RecoveryTime (note 1)  
Symbol  
Unit  
Volts  
Volts  
Volts  
Volts  
Volts  
Volts  
nA  
VF  
VF  
VF  
VF  
VF  
VF  
IR  
0.60  
0.75  
0.65  
0.80  
0.74  
0.88  
0.79  
0.92  
0.83  
1.0  
1.0  
IR  
500 @ 150oC  
8.0  
nA  
CT  
trr  
pF  
3.0  
µSecs  
Note 1: Per Method 4031-B of MIL-STD-750 with IF = 10 mA, VR = 35V, RL = 1.0K Ohms, C = 10 Pf  
For military parts use the 1N3595-1 number with the appropriate JAN, JTX or JTXV prefix.  
The SMD DO-213AA comes in commercial (LL3595) and military versions (1N3595UR-1).  
6 Lake Street - Lawrence, MA 01841  
Tel: 978-681-0392 - Fax: 978-681-9135  

1N3595UR-1 替代型号

型号 品牌 替代类型 描述 数据表
JAN1N3595UR-1 MICROSEMI

类似代替

Rectifier Diode, 1 Element, 0.15A, Silicon, DO-213AA, GLASS, SIMILAR TO DO-213AA, 2 PIN
JANTX1N3595UR-1 MICROSEMI

类似代替

Rectifier Diode, 1 Element, 0.15A, Silicon, DO-213AA, GLASS, SIMILAR TO DO-213AA, 2 PIN
JANTXV1N3595UR-1 MICROSEMI

功能相似

METALLURGICALLY BONDED

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