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1N3297 PDF预览

1N3297

更新时间: 2024-11-12 06:25:59
品牌 Logo 应用领域
NAINA 二极管
页数 文件大小 规格书
1页 84K
描述
SILICON POWER DIODE

1N3297 数据手册

  
1N3288-1N3297  
NAINA  
SILICON POWER DIODE  
DO - 8  
FEATURES  
Diffused Series  
Available in Normal & Reverse Polarity  
Industrial Grade  
Available In Avalanche Characteristic  
ELECTRICALSPECIFICATIONS  
IF  
Maximum Average Forward  
Current Te=1250C  
100A  
1.5V  
VFM  
IFSM  
IFRM  
Maximum peak forward  
voltage drop @ Rated IF(AV)  
Maximum peak one cycle  
(non-rep) surge current 10 m sec  
Maximum peak repetitive  
surge current  
2200A  
500 A  
I2t  
Maximum I2t rating (non-rep.) for  
5 to 10 msec.  
24000 A2 Sec  
THERMALMECHANICAL SPECIFICATIONS  
θJC  
Tj  
Maximum thermal resistance Junction to case  
0.400C/W  
Operating Junction Temp.  
Storage temperature  
Mounting torque  
(Non-lubricated threads)  
Approx, weight  
-650C to 1500C  
-650C to 2000C  
2.0 M-kg min,  
3.0 M-kg max  
150 gms.  
Tstg  
W
ELECTRICALRATINGS  
TYPE  
1N32881N3289 1N32901N3291 1N3292 1N3293 1N32941N3295IN3296  
VRRM  
Max. repetitive peak reverse  
voltage (v)  
100  
70  
200 300 400  
140 210 280  
200 300 400  
500  
350  
500  
600  
420  
600  
800 1000 1200  
VR(RMS) Max. R.M.S. reverse voltage(V)  
560  
800  
700 840  
1000 1200  
VR  
Max. D.C. Blocking Voltage (V)  
100  
Recommended R.M.S. working  
Voltage(v)  
40  
80  
120 160  
200  
200  
240  
200  
320 400  
200 200  
480  
200  
IR(AV)  
Max. Average reverse leakage  
200  
200 200 200  
current @ VRRM Tc 250C (uA)  
NAINA SEMICONDUCTOR LTD.,  
D-95 ,SECTOR -63 NOIDA(INDIA)  
e-mail:sales@nainasemi.com, web site: www.nainasemi.com  

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