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1N3297RHR PDF预览

1N3297RHR

更新时间： 2024-11-12 15:24:35
品牌 Logo 应用领域
DIGITRON 二极管
页数 文件大小 规格书
3页 339K
描述
Rectifier Diode

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中文翻译

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1N3297RHR 技术参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：unknown风险等级：5.74
二极管类型：RECTIFIER DIODEJESD-609代码：e0
峰值回流温度（摄氏度）：NOT SPECIFIED端子面层：Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

1N3297RHR 数据手册

 浏览型号1N3297RHR的Datasheet PDF文件第2页浏览型号1N3297RHR的Datasheet PDF文件第3页 
1N3288(A)-1N3297(A)  
HIGH POWER RECTIFIERS  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
•
•
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
Maximum Peak Repetitive Reverse  
Voltage  
Maximum Direct Reverse Voltage  
Maximum Peak Reverse Current  
VRRM  
VR  
IRRM  
Part Number  
TC = -40° to +200°C  
TC = -40° to +200  
TC = 130°C  
V
V
mA  
24  
24  
24  
24  
21  
17  
13  
11  
9
1N3288  
1N3289  
1N3290  
1N3291  
1N3292  
1N3293  
1N3294  
1N3295  
1N3296  
1N3297  
1N3288A  
1N3289A  
1N3290A  
1N3291A  
1N3292B  
1N3293A  
1N3294A  
1N3295A  
1N3296A  
1N3297A  
100  
200  
300  
400  
500  
600  
800  
1000  
1200  
1400  
100  
200  
300  
400  
500  
600  
800  
1000  
1200  
1400  
9
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Non-A  
suffix  
Characteristics  
Symbol  
A suffix  
Test Conditions  
Average Forward Current  
Maximum Surge Current  
IF(AV)  
100A  
180° sinusoidal conduction, TC = 130°C  
1500A  
1600A  
1800A  
2200A  
2300A  
2600A  
Half cycle, 50Hz sine wave  
Following any rated load  
condition and with rated  
VRRM applied  
Half cycle, 60Hz sine wave  
Half cycle, 50Hz sine wave  
IFSM  
Following any rated load  
condition and with VRRM  
applied following  
1900A  
2700A  
Half cycle, 60Hz sine wave  
surge = 0.  
24000  
A2s  
11500 A2s  
10500 A2s  
16500 A2s  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
With rated VRRM applied  
following surge, initial  
Maximum I2t for Fusing  
22000  
A2s  
TJ = 200°C  
I2t  
34000  
A2s  
With VRRM = 0 following  
surge, initial TJ = 200°C  
Maximum I2t for Individual Device Fusing  
31000  
A2s  
15000 A2s  
165000 A2√s  
340000 A2√s  
Maximum I2√t for Individual Device Fusing  
I2√t  
t = 0.1 to 10ms, VRRM = 0 following surge  
IFAV = 100A, TC = 130°C  
Maximum Peak Forward Voltage  
VFM  
1.5V  
Rev. 20190131  
123

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