Datasheet > 1N3297-PBF

1N3297-PBF

更新时间： 2024-11-12 14:46:07

品牌	Logo	应用领域
DIGITRON		二极管
页数	文件大小	规格书
3页	339K
描述
Rectifier Diode

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中文翻译

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技术参数
数据手册

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1N3297-PBF 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.66
二极管类型：	RECTIFIER DIODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

1N3297-PBF 数据手册

1N3288(A)-1N3297(A)

HIGH POWER RECTIFIERS

High-reliability discrete products

and engineering services since 1977

FEATURES

•

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Maximum Peak Repetitive Reverse

Voltage

Maximum Direct Reverse Voltage

Maximum Peak Reverse Current

V_RRM

V_R

I_RRM

Part Number

T_C= -40° to +200°C

T_C= -40° to +200

T_C= 130°C

1N3288

1N3289

1N3290

1N3291

1N3292

1N3293

1N3294

1N3295

1N3296

1N3297

1N3288A

1N3289A

1N3290A

1N3291A

1N3292B

1N3293A

1N3294A

1N3295A

1N3296A

1N3297A

100

200

300

400

500

600

800

1000

1200

1400

100

200

300

400

500

600

800

1000

1200

1400

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Non-A

suffix

Characteristics

Symbol

A suffix

Test Conditions

Average Forward Current

Maximum Surge Current

I_F(AV)

100A

180° sinusoidal conduction, T_C= 130°C

1500A

1600A

1800A

2200A

2300A

2600A

Half cycle, 50Hz sine wave

Following any rated load

condition and with rated

V_RRMapplied

Half cycle, 60Hz sine wave

Half cycle, 50Hz sine wave

I_FSM

Following any rated load

condition and with V_RRM

applied following

1900A

2700A

Half cycle, 60Hz sine wave

surge = 0.

24000

A²s

11500 A²s

10500 A²s

16500 A²s

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

With rated V_RRMapplied

following surge, initial

Maximum I²t for Fusing

22000

A²s

T_J= 200°C

I²t

34000

A²s

With V_RRM= 0 following

surge, initial T_J= 200°C

Maximum I²t for Individual Device Fusing

31000

A²s

15000 A²s

165000 A²√s

340000 A²√s

Maximum I²√t for Individual Device Fusing

I²√t

t = 0.1 to 10ms, V_RRM= 0 following surge

I_FAV= 100A, T_C= 130°C

Maximum Peak Forward Voltage

V_FM

1.5V

Rev. 20190131

12 3

中文翻译

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与1N3297-PBF相关器件

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1N3297R	TRSYS	获取价格	High Current Rectifier
1N3297RHR	DIGITRON	获取价格	Rectifier Diode
1N3297S	MICROSEMI	获取价格	SILICON POWER RECTIFIER
1N3297SR	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 100A, 1400V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1
1N3297SRE3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 100A, 1400V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1
1N3298A	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 150A, 1600V V(RRM), Silicon, DO-205AA,
1N3299	ETC	获取价格	FOUR-LAYER (SHOCKLEY) DIODE\|44V V(BO) MAX\|125UA I(S)\|DO-204AA
1N32AR	ASI	获取价格	Mixer Diode, Zero Barrier, S Band, Silicon, DO-22, DO-22, 1 PIN
1N330	ETC	获取价格	silicon diode
1N3300	ETC	获取价格	FOUR-LAYER (SHOCKLEY) DIODE\|21V V(BO) MAX\|125UA I(S)\|DO-204AA