Datasheet > 1N3164_10

1N3164_10

更新时间： 2024-09-19 07:20:51

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	74K
描述
HIGH RELIABILITY SILICON POWER RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N3164_10 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

HIGH RELIABILITY SILICON POWER RECTIFIER

Qualified per MIL-PRF-19500/211

• Glass Passivated Die

• Glass to Metal Header Construction

• Rugged Construction • High Surge Current Capability

DEVICES

LEVELS

JAN

JANTX

JANTXV

1N3164

1N3168

1N3170

1N3172

1N3174

1N3164R

1N3168R

1N3170R

1N3172R

1N3174R

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

1N3164

1N3164R

1N3168R

1N3170R

1N3172R

1N3174R

200

400

600

800

1000

Peak Repetitive Reverse Voltage

1N3168

1N3170

1N3172

1N3174

V_RWM

Average Forward Current, T_C= 150°

Average Forward Current, T_C= 120°

I_F

200

300

Peak Surge Forward Current @ t_p= 8.3ms, half sinewave,

T_C= 200°C

I_FSM

6250

Thermal Resistance, Junction to Case

Typical Thermal Resistance

0.20

°C/W

°C

R_θJC

R_θCS

T_j

0.80

Operating Case Temperature Range

Storage Temperature Range

-65°C to 200°C

T_STG

°C

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

DO-205AB (DO-9)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Forward Voltage

I_FM= 940A, T_C= 25°C

V_FM

1.55

Reverse Current

V_RM= 200, T_C= 25°C

1N3164

1N3168

1N3170

1N3172

1N3174

1N3164R

1N3168R

1N3170R

1N3172R

1N3174R

_RM= 400, T_C= 25°C

V_RM= 600, T_C= 25°C

_RM= 800, T_C= 25°C

I_RM

V_RM= 1000, T_C= 25°C

Reverse Current

V_RM= 200, T_C= 175°C

1N3164

1N3168

1N3170

1N3172

1N3174

1N3164R

1N3168R

1N3170R

1N3172R

1N3174R

_RM= 400, T_C= 175°C

V_RM= 600, T_C= 175°C

_RM= 800, T_C= 175°C

I_RM

V_RM= 1000, T_C= 175°C

Note:

T4-LDS-0140 Rev. 1 (091750)

Page 1 of 3

12 3

中文翻译

下载PDF

与1N3164_10相关器件

型号	品牌	获取价格	描述	数据表
1N3164IL	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 300A, 200V V(RRM)
1N3164R	MICROSEMI	获取价格	SILICON POWER RECTIFIER
1N3164RIL	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 300A, 200V V(RRM),
1N3165	MICROSEMI	获取价格	SILICON POWER RECTIFIER
1N3165	NJSEMI	获取价格	Silicon Power Rectifier
1N3165E3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 240A, 250V V(RRM), Silicon, DO-205AB, METAL, DO-9, 1
1N3165R	MICROSEMI	获取价格	SILICON POWER RECTIFIER
1N3166	MICROSEMI	获取价格	SILICON POWER RECTIFIER
1N3166	NJSEMI	获取价格	Silicon Power Rectifier
1N3166E3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 240A, 300V V(RRM), Silicon, DO-205AB, METAL, DO-9, 1