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1N2128A PDF预览

1N2128A

更新时间: 2024-11-05 06:20:59
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
6页 274K
描述
Power Silicon Rectifier Diodes, 35 A/40 A/60 A

1N2128A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-5
包装说明:ROHS COMPLIANT, DO-5, 1 PIN针数:1
Reach Compliance Code:compliantHTS代码:8541.10.00.80
Factory Lead Time:18 weeks风险等级:1.7
Is Samacsys:N其他特性:HIGH RELIABILITY, LOW LEAKAGE CURRENT
应用:HIGH POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JEDEC-95代码:DO-203ABJESD-30 代码:O-MUPM-D1
最大非重复峰值正向电流:1050 A元件数量:1
相数:1端子数量:1
最高工作温度:200 °C最低工作温度:-65 °C
最大输出电流:60 A封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:50 V子类别:Rectifier Diodes
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N2128A 数据手册

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1N1183, 1N3765, 1N1183A, 1N2128A Series  
Vishay High Power Products  
Power Silicon Rectifier Diodes,  
35 A/40 A/60 A  
DESCRIPTION/FEATURES  
• Low leakage current series  
RoHS  
• Good surge current capability up to 1000 A  
COMPLIANT  
• Can be supplied to meet stringent military, aerospace and  
other high reliability requirements  
• RoHS compliant  
DO-203AB (DO-5)  
PRODUCT SUMMARY  
IF(AV)  
35 A/40 A/60 A  
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
1N1183  
35 (1)  
140 (1)  
480  
500 (1)  
1N3765  
35 (1)  
140 (1)  
1N1183A  
40 (1)  
150 (1)  
1N2128A  
60 (1)  
140 (1)  
UNITS  
A
IF(AV)  
TC  
°C  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
380  
765  
860  
IFSM  
I2t  
A
400 (1)  
730  
800 (1)  
2900  
900 (1)  
3700  
1140  
A2s  
1040  
670  
2650  
3400  
I2t  
16 100  
50 to 600 (1)  
10 300  
700 to 1000 (1)  
41 000  
50 to 600 (1)  
52 500  
50 to 600 (1)  
A2s  
VRRM  
Range  
V
Note  
(1)  
JEDEC registered values  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
VRRM, MAXIMUM REPETITIVE  
PEAK REVERSE VOLTAGE  
V
VRM, MAXIMUM DIRECT  
REVERSE VOLTAGE  
V
TYPE NUMBER (3)  
TJ = - 65 °C TO 200 °C (2)  
TJ = - 65 °C TO 200 °C (2)  
1N1183  
1N1184  
1N1185  
1N1186  
1N1187  
1N1188  
1N1189  
1N1190  
1N3765  
1N3766  
1N3767  
1N3768  
1N1183A  
1N1184A  
1N1185A  
1N1186A  
1N1187A  
1N1188A  
1N1189A  
1N1190A  
1N2128A  
50 (1)  
100 (1)  
150 (1)  
200 (1)  
300 (1)  
400 (1)  
500 (1)  
600 (1)  
700 (1)  
800 (1)  
900 (1)  
1000 (1)  
50 (1)  
100 (1)  
150 (1)  
200 (1)  
300 (1)  
400 (1)  
500 (1)  
600 (1)  
700 (1)  
800 (1)  
900 (1)  
1000 (1)  
1N2129A  
1N2130A  
1N2131A  
1N2133A  
1N2135A  
1N2137A  
1N2138A  
Notes  
(1)  
(2)  
(3)  
JEDEC registered values  
For 1N1183 Series and 1N3765 Series TC = - 65 to 190 °C  
Basic part number indicates cathode to case. For anode to case, add “R” to part number, i.e., 1N1188R, 1N3766R, 1N1186RA, 1N2135RA  
Document Number: 93492  
Revision: 24-Jun-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1

1N2128A 替代型号

型号 品牌 替代类型 描述 数据表
1N2128R MICROSEMI

功能相似

Rectifier Diode, 1 Phase, 1 Element, 70A, 50V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN
1N2128A VISHAY

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Power Silicon Rectifier Diodes, 35 A/40 A/60 A
1N2128 MICROSEMI

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SILICON POWER RECTIFIER

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