是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | DO-5 | 包装说明: | ROHS COMPLIANT, DO-5, 1 PIN |
针数: | 1 | Reach Compliance Code: | compliant |
HTS代码: | 8541.10.00.80 | Factory Lead Time: | 18 weeks |
风险等级: | 5.34 | 其他特性: | HIGH RELIABILITY |
应用: | POWER | 外壳连接: | ANODE |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 1.3 V |
JEDEC-95代码: | DO-203AB | JESD-30 代码: | O-MUPM-D1 |
JESD-609代码: | e3 | 最大非重复峰值正向电流: | 900 A |
元件数量: | 1 | 相数: | 1 |
端子数量: | 1 | 最高工作温度: | 200 °C |
最低工作温度: | -65 °C | 最大输出电流: | 60 A |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 峰值回流温度(摄氏度): | NOT APPLICABLE |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 50 V |
子类别: | Rectifier Diodes | 表面贴装: | NO |
端子面层: | Tin (Sn) - with Nickel (Ni) barrier | 端子形式: | SOLDER LUG |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
1N2128R | MICROSEMI |
功能相似 |
Rectifier Diode, 1 Phase, 1 Element, 70A, 50V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN | |
1N2128A | VISHAY |
功能相似 |
Power Silicon Rectifier Diodes, 35 A/40 A/60 A | |
1N2128 | MICROSEMI |
功能相似 |
SILICON POWER RECTIFIER |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N2128RAE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 70A, 50V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN | |
1N2129 | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER | |
1N2129A | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 70A, 100V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN | |
1N2129A | INFINEON |
获取价格 |
35,40,and 60 Amp Power Silicon Rectifier Diodes | |
1N2129A | VISHAY |
获取价格 |
Power Silicon Rectifier Diodes, 35 A/40 A/60 A | |
1N2129A | AMERICASEMI |
获取价格 |
DEVICE HIGH POWER STANDARD | |
1N2129A | NJSEMI |
获取价格 |
Diode Switching 100V 70A 2-Pin DO-5 | |
1N2129AE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 70A, 100V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN | |
1N2129AR | AMERICASEMI |
获取价格 |
DEVICE HIGH POWER STANDARD | |
1N2129AR | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 70A, 100V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN |