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1N19-BP PDF预览

1N19-BP

更新时间: 2024-09-13 21:14:35
品牌 Logo 应用领域
美微科 - MCC 瞄准线二极管
页数 文件大小 规格书
3页 628K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, PLASTIC, R-1, 2 PIN

1N19-BP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:PLASTIC, R-1, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.19
其他特性:HIGH EFFIENCY, LOW POWER LOSS外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:40 V表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N19-BP 数据手册

 浏览型号1N19-BP的Datasheet PDF文件第2页浏览型号1N19-BP的Datasheet PDF文件第3页 
1N17  
THRU  
1N19  
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
High Efficiency and High Current Capability  
Low Forward Voltage Drop and Low Power loss  
Metal Silicon junction, majority carrier conduction  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Marking : Cathode band and type number  
1.0 Amp Schottky  
Barrier Rectifier  
20 to 40 Volts  
·
·
·
·
·
Maximum Ratings  
R-1  
·
·
·
·
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +125°C  
Typical Thermal Resistance: 50oC/W junction to Ambient  
For capacitive load. Derate current by 20%  
D
Maximum  
Recurrent  
Peak Reverse  
Voltage  
Maximum DC  
MCC  
Part Number  
Maximum  
RMS  
Voltage  
14V  
Blocking  
Voltage  
1N17  
1N18  
1N19  
20V  
30V  
40V  
20V  
30V  
40V  
21V  
28V  
A
Cathode Mark  
B
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
I(AV)  
1.0A  
TA = 90°C  
D
Rectified Current  
Peak Forward Surge  
Current  
IFSM  
25A  
8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
C
VF  
1N17  
1N18  
1N19  
0.45V  
0.55V  
0.60V  
IFM = 1.0A;  
TC = 25°C  
DIMENSIONS  
Maximum DC  
INCHES  
MM  
DIM  
NOTE  
Reverse Current At  
Rated DC Blocking  
Voltage  
Typical Junction  
Capacitance  
0.5mA  
10mA  
TC = 25°C  
TC = 100°C  
MIN  
MAX  
0.140  
0.102  
0.024  
-----  
MIN  
2.90  
2.30  
0.50  
20.00  
MAX  
3.50  
2.60  
0.60  
-----  
IR  
A
B
C
D
0.116  
0.091  
0.020  
0.787  
Measured at  
1.0MHz, VR=4.0V  
C
J
110pF  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
Revision: 5  
2008/01/01  
1 of 3  

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