5秒后页面跳转
1N1N3G PDF预览

1N1N3G

更新时间: 2024-10-30 03:54:39
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
3页 61K
描述
3.0A GLASS PASSIVATED RECTIFIER

1N1N3G 数据手册

 浏览型号1N1N3G的Datasheet PDF文件第2页浏览型号1N1N3G的Datasheet PDF文件第3页 
1N5400G - 1N5408G  
3.0A GLASS PASSIVATED RECTIFIER  
Features  
·
·
·
·
Glass Passivated Die Construction  
High Current Capability and Low Forward Voltage Drop  
Surge Overload Rating to 125A Peak  
A
B
A
Lead Free Finish, RoHS Compliant (Note 4)  
Mechanical Data  
C
D
·
·
Case: DO-201AD  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
DO-201AD  
Min  
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Dim  
A
Max  
Terminals: Finish - Tin. Plated Leads Solderable per  
25.40  
7.20  
MIL-STD-202, Method 208  
e
3
B
9.50  
1.30  
5.30  
·
·
·
·
Polarity: Cathode Band  
C
1.20  
Ordering Information: See Last Page  
Marking: Type Number  
D
4.80  
Weight: 1.12 grams (approximate)  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
Characteristic  
Symbol  
Unit  
5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G 5408G  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
300  
210  
400  
500  
350  
600  
420  
800  
580  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
280  
3.0  
V
A
Average Rectified Output Current  
(Note 1)  
@ TA = 55°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms single half sine-wave superimposed on  
rated load  
IFSM  
125  
1.1  
A
Forward Voltage  
@ IF = 3.0A  
VFM  
IRM  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TA 25°C  
=
5.0  
100  
mA  
@ TA = 125°C  
trr  
CT  
Reverse Recovery Time (Note 3)  
Typical Total Capacitance (Note 2)  
2.0  
40  
ms  
pF  
RqJA  
Tj, TSTG  
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
32  
°C/W  
°C  
-65 to +150  
Notes:  
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
3. Measured with I = 0.5A, I = 1.0A, I = 0.25A.  
rr  
F
R
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.  
DS29003 Rev. 6 - 2  
1 of 3  
1N5400G-1N5408G  
www.diodes.com  
ã Diodes Incorporated  

与1N1N3G相关器件

型号 品牌 获取价格 描述 数据表
1N1N4G DIODES

获取价格

3.0A GLASS PASSIVATED RECTIFIER
1N1N5G DIODES

获取价格

3.0A GLASS PASSIVATED RECTIFIER
1N1N6G DIODES

获取价格

3.0A GLASS PASSIVATED RECTIFIER
1N1N7G DIODES

获取价格

3.0A GLASS PASSIVATED RECTIFIER
1N1N8G DIODES

获取价格

3.0A GLASS PASSIVATED RECTIFIER
1N200 ETC

获取价格

silicon diode
1N2008 MICROSEMI

获取价格

Zener Diode, 100V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N2008A MICROSEMI

获取价格

Zener Diode, 100V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N2008C MICROSEMI

获取价格

Zener Diode, 100V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N2008CA MICROSEMI

获取价格

Zener Diode, 100V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN