Datasheet > 1N1202BR

1N1202BR

更新时间： 2024-11-26 07:30:27

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描述
Rectifier, Standard Recovery; Max Peak Repetitive Reverse Voltage: 12; Max TMS Bridge Input Voltage: 200; Max DC Reverse Voltage: 10; Package: DO-4R

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数据手册

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1N1202BR 数据手册

1N1199(A,B)-1N1206(A,B)

SILICON POWER RECTIFIER

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Parameter

Symbol

1N1199

1N1200

1N1201

1N1202

1N1203

1N1204

1N1205

1N1206

Peak reverse voltage

V_R

50V

100V

150V

200V

300V

400V

500V

600V

Operating & storage

temperature range

T_J, T_stg

R_θJC

-65 to +200°C

Maximum thermal resistance

Mounting torque

2.5°C/W junction to case

25-30 inch pounds

Weight

.16 ounces (5.0 grams) typical

Add “R” to part numbers for reverse polarity.

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

I_F(AV)

I_FSM

Value

12 Amps

250 Amps

260 A²s

1.2 Volts

10 µA

Test Condition

Average forward current

T_C= 170°C, half-sine wave, R_θJC= 2.5°C/W

8.3ms, half-sine, T_J= 200°C

Maximum surge current

Maximum I²t for fusing

I²t

Maximum peak forward voltage

Maximum peak reverse current

Maximum recommended operating frequency

V_FM

I_RM

I_FM= 30A: T_J= 25°C*

V_RRM, T_J= 25°C

I_RM

1.0 mA

V_RRM, T_J= 150°C*

10 kHz



Pulse test: pulse width 300µsec. Duty cycle 2%

Rev. 20150317

12 3

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1N1202CRE3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 25A, 200V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 P
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1N1202RAE3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 12A, 200V V(RRM), Silicon, DO-203AA, GLASS METAL, DO2