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1N5711 PDF预览

1N5711

更新时间: 2024-01-08 22:56:46
品牌 Logo 应用领域
固锝 - GOOD-ARK 信号二极管肖特基二极管
页数 文件大小 规格书
2页 121K
描述
Small-Signal Diode Schottky Diodes

1N5711 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.45
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最大输出电流:0.015 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.15 W认证状态:Not Qualified
最大重复峰值反向电压:70 V最大反向恢复时间:0.001 µs
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

1N5711 数据手册

 浏览型号1N5711的Datasheet PDF文件第2页 
1N5711 and 1N6263  
Small-Signal Diode  
Schottky Diodes  
Features  
For general purpose applications  
Metal-on-silicon Schottky barrier device which is protected by a  
PN junction guard ring. The low forward voltage drop and fast  
switching make it ideal for protection of MOS devices, steering,  
biasing and coupling diodes for fast switching and low logic  
level applications.  
This diode is also available in the MiniMELF case with type  
designation LL5711 and LL6263.  
Mechanical Data  
Case: DO-35 Glass Case  
Weight: approx. 0.13g  
Maximum Ratings and Thermal Characteristics  
(Ratings at 25oC ambient temperature unless otherwise specified.)  
Parameter  
Symbol  
Value  
Unit  
1N5711  
1N6263  
70  
60  
Peak inverse voltage  
VRRM  
Volts  
Power dissipation (Infinite heatsink)  
Ptot  
IFSM  
RθJA  
400 (1)  
mW  
Amps  
oC/mW  
oC  
Maximum single cycle surge 10 us square wave  
Thermal resistance junction to ambient air  
Junction temperature  
2.0  
0.3 (1)  
T
125 (1)  
j
Storage temperature range  
TS  
-55 to +150 (1)  
oC  
Electrical Characteristics  
(TJ=25oC unless otherwise noted.)  
Parameter  
Symbol  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
1N5711  
Reverse breakdown voltage  
1N6263  
70  
60  
-
-
-
-
V(BR)R  
IR  
IR=10uA  
Volts  
nA  
Leakage current  
VR=50V  
-
-
200  
IF=1mA  
IF=15mA  
-
-
-
-
0.41  
1.0  
Forward voltage drop  
Junction capacitance  
Reverse recovery time  
VF  
Volt  
pF  
Ctot  
trr  
VR=0V, f=1MHz  
-
-
-
-
2.2  
1
IF=IR=5mA,  
recovery to 0.1IR  
ns  
Notes:  
1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.  
673  

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