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1N5711-B PDF预览

1N5711-B

更新时间: 2024-01-31 21:18:41
品牌 Logo 应用领域
美台 - DIODES 二极管开关
页数 文件大小 规格书
2页 52K
描述
Rectifier Diode, Schottky, 1 Element, Silicon,

1N5711-B 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.45
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最大输出电流:0.015 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.15 W认证状态:Not Qualified
最大重复峰值反向电压:70 V最大反向恢复时间:0.001 µs
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

1N5711-B 数据手册

 浏览型号1N5711-B的Datasheet PDF文件第2页 
1N5711  
SCHOTTKY BARRIER SWITCHING DIODE  
Features  
·
·
·
·
Ultra-Fast Switching Speed  
A
B
A
High Reverse Breakdown Voltage  
Low Forward Voltage Drop  
Guard Ring Junction Protection  
C
D
Mechanical Data  
DO-35  
Min  
25.40  
¾
·
·
Case: DO-35, Glass  
Dim  
A
Max  
Leads: Solderable per MIL-STD-202,  
Method 208  
¾
B
4.00  
0.60  
2.00  
·
·
·
Marking: Type Number  
Polarity: Cathode Band  
Weight: 0.13 grams (approx.)  
C
¾
D
¾
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
1N5711  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
V
70  
VR(RMS)  
IFM  
RMS Reverse Voltage  
49  
15  
V
mA  
mW  
°C/W  
°C  
Forward Continuous Current  
Pd  
Power Dissipation (Note 1)  
400  
RqJA  
Tj  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating Temperature Range  
Storage Temperature Range  
300  
-55 to +125  
-55 to +150  
TSTG  
°C  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Reverse Breakdown Voltage (Note 2)  
Reverse Leakage Current (Note 2)  
Symbol  
V(BR)R  
IR  
Min  
70  
Max  
¾
Unit  
V
Test Condition  
I
R = 10mA  
VR = 50V  
¾
200  
nA  
IF = 1.0mA  
IF = 15mA  
0.41  
1.00  
VF  
Cj  
trr  
Forward Voltage Drop (Note 2)  
Junction Capacitance  
¾
¾
¾
V
VR = 0V, f = 1.0MHz  
2.0  
1.0  
pF  
ns  
IF = IR = 5.0mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
Notes:  
1. Valid provided that leads are kept at ambient temperature.  
2. Short duration test pulse used to minimize self-heating effect.  
DS11011 Rev. F-2  
1 of 2  
1N5711  

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