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1N5711_15 PDF预览

1N5711_15

更新时间: 2024-09-26 01:25:19
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描述
Small-Signal Diode Schottky Diodes

1N5711_15 数据手册

 浏览型号1N5711_15的Datasheet PDF文件第2页 
1N5711 and 1N6263  
Small-Signal Diode  
Schottky Diodes  
Features  
For general purpose applications  
Metal-on-silicon Schottky barrier device which is protected by a  
PN junction guard ring. The low forward voltage drop and fast  
switching make it ideal for protection of MOS devices, steering,  
biasing and coupling diodes for fast switching and low logic  
level applications.  
This diode is also available in the MiniMELF case with type  
designation LL5711 and LL6263.  
Mechanical Data  
Case: DO-35 Glass Case  
Weight: approx. 0.13g  
Maximum Ratings and Thermal Characteristics  
(Ratings at 25oC ambient temperature unless otherwise specified.)  
Parameter  
Symbol  
Value  
Unit  
1N5711  
1N6263  
70  
60  
Peak inverse voltage  
VRRM  
Volts  
Power dissipation (Infinite heatsink)  
Ptot  
IFSM  
RθJA  
400 (1)  
mW  
Amps  
oC/mW  
oC  
Maximum single cycle surge 10 us square wave  
Thermal resistance junction to ambient air  
Junction temperature  
2.0  
0.3 (1)  
T
125 (1)  
j
Storage temperature range  
TS  
-55 to +150 (1)  
oC  
Electrical Characteristics  
(TJ=25oC unless otherwise noted.)  
Parameter  
Symbol  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
1N5711  
Reverse breakdown voltage  
1N6263  
70  
60  
-
-
-
-
V(BR)R  
IR  
IR=10uA  
Volts  
nA  
Leakage current  
VR=50V  
-
-
200  
IF=1mA  
IF=15mA  
-
-
-
-
0.41  
1.0  
Forward voltage drop  
Junction capacitance  
Reverse recovery time  
VF  
Volt  
pF  
Ctot  
trr  
VR=0V, f=1MHz  
-
-
-
-
2.2  
1
IF=IR=5mA,  
recovery to 0.1IR  
ns  
Notes:  
1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.  
673  

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