Datasheet > 1N5711W

1N5711W

更新时间： 2023-12-06 20:00:52

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	504K
描述
Switching Diodes Switch detector

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1N5711W 数据手册

1N5711W

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

Low Forward Voltage Drop

Guard Ring Construction for Transient

Protection

Fast Switching Time

Low Reverse Capacitance

SOD-123FL

Dim Min Max

Typ

3.58 3.72 3.65

2.72 2.78 2.75

1.77 1.83 1.80

1.02 1.08 1.05

0.097 1.03 1.00

0.13 0.17 0.15

0.53 0.57 0.55

Mechanical Data

Case

: SOD-123FL

plastic body over passivated junction

Terminals

: Plated axial leads,

Method 2026

solderable per MIL-STD-750,

Polarity

: Color band denotes cathode end

All Dimensions in mm

Weight

:0.0007 ounce, 0.02 grams

T_A= 25ꢀC unless otherwise specified

Maximum Ratings

Parameter

Symbol

Value

Unit

V_RRM

Repetitive Peak Reverse Voltage

400⁽¹⁾

P_D

Power Dissipation (Infinite Heatsink)

Maximum Single Cycle Surge 10 ms Square Wave

Thermal Resistance Junction to Ambient Air

Junction Temperature

I_FSM

0.3⁽¹⁾

125⁽¹⁾

R_q

°C/mW

°C

T_J

-55 to + 150 ⁽¹⁾

T_S

Storage temperature range

°C

Electrical Characteristics (T_J= 25°C unless otherwise noted)

Test Condition

I_R= 10 mA

Min

Typ

Max

Unit

Parameter

Symbol

V_(BR)R

I_R

Reverse Breakdown Voltage

Reverse Current

V_R= 50 V

I_F= 1mA

I_F= 15mA

200

0.41

1.0

V_F

Forward Voltage Drop

V_R= 0 V, f = 1MHz

Diode Capacitance

Trr

2.0

I_F= I_R= 5mA,

Reverse Recovery Time

recover to 0.1I_R

Note:

(1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature..

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