5秒后页面跳转
1N4149 PDF预览

1N4149

更新时间: 2024-11-13 22:52:07
品牌 Logo 应用领域
商朗 - LUNSURE 小信号开关二极管
页数 文件大小 规格书
1页 51K
描述
SMALL SIGNAL SWITCHING DIODE

1N4149 数据手册

  
CE  
1N914 THRU 1N4454  
SMALL SIGNAL SWITCHING DIODE  
CHENYI ELECTRONICS  
FEATURES  
. Silicon epitaxial planar diode  
. Fast swithching diodes  
. 1N4149, 1N4447, 1N4449 are also  
avaible in glass case DO-34  
MECHANICAL DATA  
. Case: DO-35 glass case  
. Polarity: Color brand denotes cathode end  
. Weight: Approx. 0.13gram  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Peak  
Max.  
Aver.  
Max.  
Max.  
Max.  
Forward  
Voltage  
drop  
Max.  
reverse  
Power Junction  
Reverse  
Current  
Max. Reverse Recovery Time  
Type  
voltage Rectified Dissip tempera-  
VRM(V) Current At 25 ture  
I(AV)Ma Ptot(mW) TJ  
VF  
at IF  
IR  
at trr(ns)  
Test conditions  
(V) (mA) (nA) VR(V) Max.  
1N914  
1N41491)  
1N4150  
1N4152  
1N4153  
1N4154  
1N44471)  
1N44491)  
1N4450  
1N4451  
1N4453  
1N4454  
100  
100  
50  
75  
150  
200  
150  
150  
1502)  
150  
150  
150  
150  
150  
150  
500  
500  
500  
400  
400  
500  
500  
500  
400  
400  
400  
400  
200  
200  
200  
175  
175  
200  
200  
200  
175  
175  
175  
175  
1.0  
1.0  
10  
10  
25  
25  
20  
20  
50  
30  
50  
25  
20  
20  
30  
30  
20  
50  
4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
4.0 IF=IR=10 to 200mA, to 0.1 IF  
1.0  
200  
0.10  
0.10  
0.10  
20  
100  
50  
40  
0.55  
0.55  
1.0  
2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
4.0 IF=IR=10mA to, IR=1mA  
75  
50  
35  
100  
25  
100  
100  
40  
1.0  
1.0  
30  
25  
0.54  
0.50  
0.55  
1.0  
0.50  
0.10  
0.01  
10  
50  
40  
50  
10 IF=IR=10mA to, IR=1mA  
30  
50  
75  
100  
4.0  
IF=IR=10mA to, IR=1mA  
Notes: 1.These diodes are also available in glass case DO-34  
2.Valid provided that leads at a distance of 8mm from case are kept at ambient temperature parameters for diodes  
in case DO-34: Ptot=300mW TSTG=-65 to +175 TJ=175 JA=400K/W  
R
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD  
Page 1 of 1  

与1N4149相关器件

型号 品牌 获取价格 描述 数据表
1N4149CSM SEME-LAB

获取价格

SILICON EPITAXIAL PLANAR DIODE
1N4149FV ROHM

获取价格

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35
1N4149HF ROHM

获取价格

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35
1N4149HG ROHM

获取价格

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35
1N4149HJ ROHM

获取价格

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35
1N4149T-10 ROHM

获取价格

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35
1N4149T-10A ROHM

获取价格

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35
1N4149T-11A ROHM

获取价格

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35
1N4149T-16A ROHM

获取价格

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35
1N4149T26R TI

获取价格

DIODE 100 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode