Datasheet > 19N10G

19N10G

更新时间： 2024-11-19 05:56:11

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	196K
描述
100V N-Channel MOSFET

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19N10G 数据手册

UNISONIC TECHNOLOGIES CO., LTD

19N10

Preliminary

Power MOSFET

100V N-Channel MOSFET

DESCRIPTION

The UTC 100V N-Channel enhancement mode power field

effect transistors (MOSFET) are produced by UTC’s planar stripe,

DMOS technology which has been tailored especially in the

avalanche and commutation mode to minimize on-state

resistance, provide superior switching performance, and

withstand high energy pulse. They are suited for low voltage

applications such as audio amplifier, high efficiency switching

DC/DC converters, and DC motor control.

FEATURES

* R_DS(ON)= 0.1Ω @V_GS= 10 V

* Ultra low gate charge ( typical 19nC )

* Low reverse transfer Capacitance ( C_RSS= typical 32pF )

* Fast switching capability

Lead-free:

Halogen-free: 19N10G

19N10L

* Avalanche energy Specified

* Improved dv/dt capability, high ruggedness

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

TO-251

Packing

Tube

Normal

Lead Free

Halogen Free

19N10-TM3-T

19N10L-TM3-T

19N10G-TM3-T

www.unisonic.com.tw

1 of 6

QW-R502-261.a

12 3 4 5 6

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