UNISONIC TECHNOLOGIES CO., LTD
19N10
Preliminary
Power MOSFET
100V N-Channel MOSFET
DESCRIPTION
The UTC 100V N-Channel enhancement mode power field
effect transistors (MOSFET) are produced by UTC’s planar stripe,
DMOS technology which has been tailored especially in the
avalanche and commutation mode to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse. They are suited for low voltage
applications such as audio amplifier, high efficiency switching
DC/DC converters, and DC motor control.
FEATURES
* RDS(ON) = 0.1Ω @VGS = 10 V
* Ultra low gate charge ( typical 19nC )
* Low reverse transfer Capacitance ( CRSS = typical 32pF )
* Fast switching capability
Lead-free:
Halogen-free: 19N10G
19N10L
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-251
Packing
Tube
Normal
Lead Free
Halogen Free
1
2
3
19N10-TM3-T
19N10L-TM3-T
19N10G-TM3-T
G
D
S
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Copyright © 2008 Unisonic Technologies Co., Ltd
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