Datasheet > 19N10VL-TN3-R

19N10VL-TN3-R

更新时间： 2024-11-20 01:03:55

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	227K
描述
100V N-Channel MOSFET

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19N10VL-TN3-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD

19N10V

Power MOSFET

100V N-Channel MOSFET

DESCRIPTION

The UTC 100V N-Channel enhancement mode power field

effect transistors (MOSFET) are produced by UTC’s planar stripe,

DMOS technology which has been tailored especially in the

avalanche and commutation mode to minimize on-state resistance,

provide superior switching performance, and withstand high energy

pulse. They are suited for low voltage applications such as audio

amplifier, high efficiency switching DC/DC converters, and DC motor

control.

FEATURES

* R_DS(ON)= 0.1Ω @V_GS= 10 V

* Ultra low gate charge ( typical 19nC )

* Low reverse transfer Capacitance ( C_RSS= typical 32pF )

* Fast switching capability

* Avalanche energy Specified

* Improved dv/dt capability, high ruggedness

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

19N10VL-TM3-T

19N10VL-TN3-R

19N10VG-TM3-T

19N10VG-TN3-R

TO-251

TO-252

Tube

Tape Reel

www.unisonic.com.tw

1 of 6

QW-R502-914, A

12 3 4 5 6

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