Datasheet > 19N10_09

19N10_09

更新时间： 2022-09-12 00:52:17

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友顺 - UTC		/
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描述
100V N-Channel MOSFET

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19N10_09 数据手册

UNISONIC TECHNOLOGIES CO., LTD

19N10

Power MOSFET

100V N-Channel MOSFET

DESCRIPTION

The UTC 100V N-Channel enhancement mode power field

effect transistors (MOSFET) are produced by UTC’s planar stripe,

DMOS technology which has been tailored especially in the

avalanche and commutation mode to minimize on-state resistance,

provide superior switching performance, and withstand high energy

pulse. They are suited for low voltage applications such as audio

amplifier, high efficiency switching DC/DC converters, and DC motor

control.

FEATURES

* R_DS(ON)= 0.1Ω @V_GS= 10 V

* Ultra low gate charge ( typical 19nC )

* Low reverse transfer Capacitance ( C_RSS= typical 32pF )

* Fast switching capability

* Avalanche energy Specified

* Improved dv/dt capability, high ruggedness

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

19N10L-T3P-T

19N10L-TA3-T

19N10L-TM3-T

19N10L-TN3-R

19N10L-TQ2-R

19N10L-TQ2-T

19N10G-T3P-T

19N10G-TA3-T

19N10G-TM3-T

19N10G-TN3-R

19N10G-TQ2-R

19N10G-TQ2-T

TO-3P

TO-220

TO-251

TO-252

TO-263

Tube

Tape Reel

Tube

www.unisonic.com.tw

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