Datasheet > 14KESD6.5AE3

14KESD6.5AE3

更新时间： 2024-11-26 14:31:51

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	168K
描述
Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, HERMETIC SEALED, GLASS, DO-41, 2 PIN

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14KESD6.5AE3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DO-41	包装说明：	O-LALF-W2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.67	最小击穿电压：	7.22 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-204AL	JESD-30 代码：	O-LALF-W2
JESD-609代码：	e3	最大非重复峰值反向功率耗散：	4000 W
元件数量：	1	端子数量：	2
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	1.5 W
认证状态：	Not Qualified	最大重复峰值反向电压：	6.5 V
表面贴装：	NO	技术：	AVALANCHE
端子面层：	MATTE TIN	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

14KESD6.5AE3 数据手册

14KESD5.0 thru 14KESD170CA, e3

AXIAL-LEAD TVS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These small axial-leaded TVS devices feature the ability to clamp

dangerous high voltage, short-term transients such as produced by directed

or radiated electrostatic discharge phenomena before entering sensitive

component regions of a circuit design. They are small economical transient

voltage suppressors targeted primarily for short-term transients below a few

microseconds while still achieving significant peak-pulse-power capability

as illustrated in Figure #1.

DO-41

(DO-204AL)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Excellent protection in clamping direct ESD level

transients in excess of 40,000 V per MIL-STD-750,

Method 1020 (approx. 150 ns exponential wave)

•

Protects Sensitive circuits from short duration fast

rise time transients such as Electrostatic Discharge

(ESD) or Electrical Fast Transients (EFT)

Absorbs ESD level transients* of 14,000 Watts per MIL-

STD-750, Method 1020 (approximately 150 ns

exponential wave, or one microsecond transients up to

4000 watts. See Figure #1 and #2 for overall transient

Peak Pulse Power.

•

Minimal capacitance (See Figure #3)

Flexible axial-lead mounting terminals

Bidirectional features available by adding a “C” or

“CA” suffix

•

Clamps Transients in less than 100 picoseconds

Working Stand-off Voltage range of 5V to 170V

Hermetic DO-41 Package. Also available in surface

mount DO-213AB MELF package (see separate data

sheet)

•

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

4000 Watts for One Microsecond Square Wave or

14,000 watts per ESD Wave form of MIL-STD-750,

method 1020.

•

CASE: Hermetically sealed axial-lead glass DO-41

(DO-204AL) package

•

FINISH: Tin-lead or RoHS compliant matte-Tin

plating solderable per MIL-STD-750, method 2026

•

See Surge Rating curve in Figures #1 and 2.

Operating and storage temperature –65^oC to 175^oC

•

POLARITY: Banded end is cathode

WEIGHT: 0.378 grams (typical)

MARKING: Part number

THERMAL RESISTANCE: Less than 83^oC/Watt

junction to lead at 0.375 inches from body.

•

DC power dissipation 1500 mW at T_L= 75^oC at 3/8

inch (10 mm) lead length from body.

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

Derate at 22.8 W/^oC above 25^oC for P_PP(1μs) and

•

See package dimension on last page

at 15 mW/^oC above 75^oC for dc power.

Forward Surge Current 500 amps for 1μs at T_L=

25^oC (rise time > 100 ns).

6-8-2007 REV C

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与14KESD6.5AE3相关器件

型号	品牌	获取价格	描述	数据表
14KESD6.5ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
14KESD6.5C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
14KESD6.5CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
14KESD6.5CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
14KESD6.5CAE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
14KESD6.5CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
14KESD6.5CTRE3	MICROSEMI	获取价格	Transient Suppressor,
14KESD6.5E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
14KESD6.5E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
14KESD6.5TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO

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