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14KESD6.5ATR

更新时间： 2024-11-26 13:03:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管电视局域网
页数 文件大小 规格书
4页 189K
描述
Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, HERMETIC SEALED, GLASS, DO-41, 2 PIN

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14KESD6.5ATR 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：DO-41包装说明：HERMETIC SEALED, GLASS, DO-41, 2 PIN
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.87Is Samacsys：N
最小击穿电压：7.22 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-204AL
JESD-30 代码：O-LALF-W2JESD-609代码：e0
最大非重复峰值反向功率耗散：4000 W元件数量：1
端子数量：2封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：1.5 W认证状态：Not Qualified
最大重复峰值反向电压：6.5 V表面贴装：NO
技术：AVALANCHE端子面层：TIN LEAD
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

14KESD6.5ATR 数据手册

 浏览型号14KESD6.5ATR的Datasheet PDF文件第2页浏览型号14KESD6.5ATR的Datasheet PDF文件第3页浏览型号14KESD6.5ATR的Datasheet PDF文件第4页 
14KESD5.0 thru 14KESD170CA  
AXIAL-LEAD TVS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These small axial-leaded TVS devices feature the ability to clamp  
dangerous high voltage, short-term transients such as produced by directed  
or radiated electrostatic discharge phenomena before entering sensitive  
component regions of a circuit design. They are small economical transient  
voltage suppressors targeted primarily for short-term transients below a few  
microseconds while still achieving significant peak-pulse-power capability  
as illustrated in Figure #1.  
DO-41  
(DO-204AL)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Excellent protection in clamping direct ESD level  
transients in excess of 40,000 V per MIL-STD-750,  
Method 1020 (approx. 150 ns exponential wave)  
Absorbs ESD level transients* of 14,000 Watts per  
MIL-STD-750, Method 1020 (approximately 150 ns  
exponential wave, or one microsecond transients  
up to 4000 watts. See Figure #1 and #2 for overall  
transient Peak Pulse Power.  
•
Protects Sensitive circuits from short duration fast  
rise time transients such as Electrostatic Discharge  
(ESD) or Electrical Fast Transients (EFT)  
Minimal capacitance (See Figure #3)  
Flexible axial-lead mounting terminals  
•
•
•
Bidirectional features available by adding a “C” or  
“CA” suffix  
•
•
•
Clamps Transients in less than 100 picoseconds  
Working Stand-off Voltage range of 5V to 170V  
Hermetic DO-41 Package. Also available in surface  
mount DO-213AB MELF package (see separate  
data sheet)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
4000 Watts for One Microsecond Square Wave or  
14,000 watts per ESD Wave form of MIL-STD-750,  
method 1020.  
•
•
CASE: Hermetically sealed axial-lead glass DO-41  
(DO-204AL) package  
TERMINALS: Leads, tin-lead plated solderable per  
MIL-STD-750, method 2026  
POLARITY: Banded end is cathode  
WEIGHT: 0.378 grams (typical)  
MARKING: Part number  
•
•
•
See Surge Rating curve in Figures #1 and 2.  
Operating and storage temperature –65oC to 175oC  
•
•
•
•
THERMAL RESISTANCE: Less than 83oC/Watt  
junction to lead at 0.375 inches from body.  
•
•
•
DC power dissipation 1500 mW at TL = 75oC at 3/8  
inch (10 mm) lead length from body.  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
Derate at 22.8 W/oC above 25oC for PPP (1µs) and  
•
See package dimension on last page  
at 15 mW/oC above 75oC for dc power.  
Forward Surge Current 500 amps for 1µs at TL =  
25oC (rise time > 100 ns).  
Copyright 2002  
Microsemi  
Page 1  
10-03-2003 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

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14KESD6.5C MICROSEMI

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 		Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
14KESD6.5CA MICROSEMI

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 		Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
14KESD6.5CAE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
14KESD6.5CAE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
14KESD6.5CE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
14KESD6.5CTRE3 MICROSEMI

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 		Transient Suppressor,
14KESD6.5E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
14KESD6.5E3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
14KESD6.5TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
14KESD6.5TRE3 MICROSEMI

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 		Transient Suppressor,

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