Datasheet > 12N65G

12N65G

更新时间： 2024-09-16 01:07:47

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
8页	2410K
描述
N-CHANNEL POWER MOSFET

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数据手册

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12N65G 数据手册

12N65 Series

N-CHANNEL POWER MOSFET

Features

Pin Definition:

R_DS(ON)<0.85Ω @ V_GS=10V

●

1. Gate

2. Drain

3. Source

Fast switching capability

Low gate charge

Lead free in compliance with EU RoHS directive.

Green molding compound

Mechanical Data

●

Case: TO-220,ITO-220,TO-262,TO-263 Package

Block Diagram

Ordering Information

Package

Part No.

Packing

TO-220

ITO-220

TO-262

TO-263

50pcs / Tube

12N65T

12N65F

12N65K

12N65G

T_A= 25ꢀC unless otherwise specified

Maximum Ratings

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

V_DSS

650

±30

Gate-Source Voltage

V_GSS

I_D

Continuous Drain Current

Pulsed Drain Current (Note 2)

I_DM

Avalanche Energy

Power Dissipation

Single Pulsed (Note 3)

E_AS

790

225

TO-220/TO-262/TO-263

P_D

ITO-220

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

°C

T_OPR

T_STG

-55 ~ +150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by T_J

3. L = 30mH, I_AS= 7.1A, V_DD= 50V, R_G= 25 Ω, Starting T_J= 25°C

12 3 4 5 6 7 8

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