Datasheet > 12N65K-MT

12N65K-MT

更新时间： 2022-02-26 11:10:59

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
5页	206K
描述
N-CHANNEL JUNCTION FET

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12N65K-MT 数据手册

UNISONIC TECHNOLOGIES CO., LTD

12N65K-MT

Preliminary

Power MOSFET

12A, 650V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 12N65K-MT are N-Channel enhancement mode

power field effect transistors (MOSFET) which are produced by

using UTC’s proprietary, planar stripe and DMOS technology.

These devices are suited for high efficiency switch mode power

supply. To minimize on-state resistance, provide superior switching

performance and withstand high energy pulse in the avalanche and

commutation mode, the advanced technology has been especially

tailored.



FEATURES

* R_DS(ON)< 0.75 Ω @ V_GS= 10 V, I_D= 6 A

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness



SYMBOL

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

12N65KL-TF1-T

Halogen Free

12N65KG-TF1-T

12N65KG-TF2-T

TO-220F1

TO-220F2

Tube

12N65KL-TF2-T

Note: Pin Assignment: G: Gate

D: Drain

S: Source

12N65KL-TF1-T

(1) T: Tube

(1)Packing Type

(2)Package Type

(3)Green Package

(2) TF1: TO-220F1, TF2: TO-220F2

(3) L: Lead Free, G: Halogen Free and Lead Free



MARKING

www.unisonic.com.tw

1 of 7

QW-R502-B07.F

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