Datasheet > 12N65G-TF2-T

12N65G-TF2-T

更新时间： 2024-02-24 03:12:08

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
8页	412K
描述
Power Field-Effect Transistor,

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12N65G-TF2-T 技术参数

UNISONIC TECHNOLOGIES CO., LTD

12N65

Power MOSFET

12A, 650V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 12N65 are N-Channel enhancement mode power field

effect transistors (MOSFET) which are produced by using UTC’s

proprietary, planar stripe and DMOS technology.

These devices are suited for high efficiency switch mode power

supply. To minimize on-state resistance, provide superior switching

performance and withstand high energy pulse in the avalanche and

commutation mode, the advanced technology has been especially

tailored.



FEATURES

* R_DS(ON)< 0.85Ω @ V_GS= 10V, I_D= 6.0A

* Ultra low gate charge ( typical 42 nC )

* Low reverse transfer capacitance ( C_RSS= typical 25 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness



SYMBOL

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