Datasheet > 12N60G-T2Q-T

12N60G-T2Q-T

更新时间： 2024-09-16 07:15:27

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
7页	366K
描述
12A, 600V N-CHANNEL POWER MOSFET

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12N60G-T2Q-T 数据手册

UNISONIC TECHNOLOGIES CO., LTD

12N60

Power MOSFET

12A, 600V N-CHANNEL

POWER MOSFET

TO-220

DESCRIPTION

The UTC 12N60 are N-Channel enhancement mode power

TO-220F

TO-220F1

field effect transistors (MOSFET) which are produced using UTC’s

proprietary, planar stripe, DMOS technology.

These devices are suited for high efficiency switch mode

power supply. To minimize on-state resistance, provide superior

switching performance, and withstand high energy pulse in the

avalanche and commutation mode the advanced technology has

been especially tailored.

FEATURES

* R_DS(ON)= 0.8Ω @V_GS= 10 V

TO-262

* Ultra low gate charge ( typical 42 nC )

* Low reverse transfer capacitance ( C_RSS= typical 25 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

12N60L-TA3-T

12N60L-TF1-T

12N60L-TF3-T

12N60L-T2Q-T

12N60G-TA3-T

12N60G-TF1-T

12N60G-TF3-T

12N60G-T2Q-T

TO-220

TO-220F1

TO-220F

TO-262

Tube

Note: Pin Assignment: G: Gate

D: Drain

S: Source

www.unisonic.com.tw

1 of 7

QW-R502-170.I

12 3 4 5 6 7

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