Datasheet > 12N60G-TF2-T

12N60G-TF2-T

更新时间： 2024-11-07 01:07:27

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
8页	379K
描述
N-CHANNEL JUNCTION FET

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12N60G-TF2-T 数据手册

UNISONIC TECHNOLOGIES CO., LTD

12N60

Power MOSFET

12A, 600V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 12N60 are N-Channel enhancement mode power

field effect transistors (MOSFET) which are produced using

UTC’s proprietary, planar stripe, DMOS technology.

These devices are suited for high efficiency switch mode

power supply. To minimize on-state resistance, provide superior

switching performance, and withstand high energy pulse in the

avalanche and commutation mode the advanced technology has

been especially tailored.



FEATURES

* R_DS(ON)< 0.8Ω @V_GS= 10 V

* Ultra low gate charge ( typical 42 nC )

* Low reverse transfer capacitance ( C_RSS= typical 25 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness



SYMBOL



ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

12N60L-TA3-T

12N60L-TF1-T

12N60L-TF2-T

12N60L-TF3-T

12N60L-T2Q-T

12N60L-T3P-T

12N60G-TA3-T

12N60G-TF1-T

12N60G-TF2-T

12N60G-TF3-T

12N60G-T2Q-T

12N60G-T3P-T

TO-220

TO-220F1

TO-220F2

TO-220F

TO-262

Tube

TO-3P

Note: Pin Assignment: G: Gate

D: Drain

S: Source

www.unisonic.com.tw

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