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12N60G-TF2-T PDF预览

12N60G-TF2-T

更新时间: 2024-11-02 01:07:27
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
8页 379K
描述
N-CHANNEL JUNCTION FET

12N60G-TF2-T 数据手册

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UNISONIC TECHNOLOGIES CO., LTD  
12N60  
Power MOSFET  
12A, 600V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC 12N60 are N-Channel enhancement mode power  
field effect transistors (MOSFET) which are produced using  
UTC’s proprietary, planar stripe, DMOS technology.  
These devices are suited for high efficiency switch mode  
power supply. To minimize on-state resistance, provide superior  
switching performance, and withstand high energy pulse in the  
avalanche and commutation mode the advanced technology has  
been especially tailored.  
FEATURES  
* RDS(ON) < 0.8@VGS = 10 V  
* Ultra low gate charge ( typical 42 nC )  
* Low reverse transfer capacitance ( CRSS = typical 25 pF )  
* Fast switching capability  
* Avalanche energy specified  
* Improved dv/dt capability, high ruggedness  
SYMBOL  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
3
S
S
S
S
S
S
12N60L-TA3-T  
12N60L-TF1-T  
12N60L-TF2-T  
12N60L-TF3-T  
12N60L-T2Q-T  
12N60L-T3P-T  
12N60G-TA3-T  
12N60G-TF1-T  
12N60G-TF2-T  
12N60G-TF3-T  
12N60G-T2Q-T  
12N60G-T3P-T  
TO-220  
TO-220F1  
TO-220F2  
TO-220F  
TO-262  
G
G
G
G
G
G
D
D
D
D
D
D
Tube  
Tube  
Tube  
Tube  
Tube  
Tube  
TO-3P  
Note: Pin Assignment: G: Gate  
D: Drain  
S: Source  
www.unisonic.com.tw  
1 of 7  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R502-170.K  

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