Datasheet > 12N60G-X-TF3-T

12N60G-X-TF3-T

更新时间： 2024-09-16 12:20:15

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
7页	358K
描述
12 Amps, 600/650 Volts N-CHANNEL MOSFET

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12N60G-X-TF3-T 数据手册

UNISONIC TECHNOLOGIES CO., LTD

12N60

Power MOSFET

12 Amps, 600/650 Volts

N-CHANNEL MOSFET

DESCRIPTION

The UTC 12N60 are N-Channel enhancement mode power

field effect transistors (MOSFET) which are produced using UTC’s

proprietary, planar stripe, DMOS technology.

These devices are suited for high efficiency switch mode

power supply. To minimize on-state resistance, provide superior

switching performance, and withstand high energy pulse in the

avalanche and commutation mode the advanced technology has

been especially tailored.

FEATURES

Lead-free:

12N60L

* R_DS(ON)= 0.8Ω @V_GS= 10 V

Halogen-free:12N60G

* Ultra low gate charge ( typical 42 nC )

* Low reverse transfer capacitance ( C_RSS= typical 25 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

12N60L-x-TA3-T

12N60L-x-TF1-T

12N60L-x-TF3-T

12N60G-x-TA3-T

12N60G-x-TF1-T

12N60G-x-TF3-T

TO-220

TO-220F1

TO-220F

Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

www.unisonic.com.tw

1 of 7

QW-R502-170.E

12 3 4 5 6 7

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