Datasheet > 12N65

12N65

更新时间： 2024-09-14 14:52:39

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
3页	669K
描述
场效应晶体管

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

12N65 数据手册

12N65

N-Channel Enhancement Mode Field Effect Transistor

FEATURES



DPAK Worldwide Best R_DS(on)

High dv/dt Capability.

Excellent Switching Performace.

Easy to Drive.

100% Avalanche Tested.

APPLICATIONS



N-channel Enhancement mode Effect Transistor.



Switching Applications.

TO-220AB

MAXIMUM RATING operating temperature range applies unless otherwise specified

Value

Symbol

Parameter

Unit

V_DS

Drain-Source Voltage

650

Gate -Source Voltage

V_GS

Maximum Drain Current(continuous) at T_C=25℃

T_C=100℃

I_D

7.3

Drain Current(pulsed)Note1

I_DM

Power Dissipation at T_C=25℃

P_D

Avalavche Current,Repetitive or Not-repetitive

I_AR

Single Pulse Avalanche Energy

(starting T_j=25℃,I_D=I_AR,V_DD=50V)

E_AS

dv/dt

R_θJA

T_jT_stg

200

V/ns

Peak Diode Recovery Voltage Slope(Note2)

Thermal Resistance,Junction-to-Ambient

62.5

℃/W

Operating Junction and StorageTem-perature Range

-55 to +150

℃

Note:1.Pulse width limited by safe operating area

2.I_SO≤12A,di/dt≤400A/us,V_Peak<V_(BR)DSS

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3

中文翻译

下载PDF

与12N65相关器件

型号	品牌	获取价格	描述	数据表
12N65_15	UTC	获取价格	N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE
12N65B	PINGWEI	获取价格	12A mps,650 Volts N-CHANNEL MOSFET
12N65-C	UTC	获取价格	N-CH
12N65F	PINGWEI	获取价格	12A mps,650 Volts N-CHANNEL MOSFET
12N65F	SUNMATE	获取价格	N-CHANNEL POWER MOSFET
12N65G	SUNMATE	获取价格	N-CHANNEL POWER MOSFET
12N65G-T2Q-T	UTC	获取价格	12A, 650V N-CHANNEL POWER MOSFET
12N65G-T3P-T	UTC	获取价格	Power Field-Effect Transistor,
12N65G-TA3-T	UTC	获取价格	12A, 650V N-CHANNEL POWER MOSFET
12N65G-TF1-T	UTC	获取价格	12A, 650V N-CHANNEL POWER MOSFET