Datasheet > 11DQ06-M3

11DQ06-M3

更新时间： 2022-09-11 00:02:02

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	120K
描述
Schottky Rectifier, 1.1 A

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11DQ06-M3 数据手册

VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3

www.vishay.com

Vishay Semiconductors

Schottky Rectifier, 1.1 A

FEATURES

• Low profile, axial leaded outline

• High frequency operation

Cathode

Anode

• Very low forward voltage drop

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

DO-204AL

• Guard ring for enhanced ruggedness and

long term reliability

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for commercial level

PRODUCT SUMMARY

Package

DO-204AL (DO-41)

1.1 A

• Halogen-free according to IEC 61249-2-21 definition

(-M3 only)

I_F(AV)

V_R

50 V, 60 V

V_Fat I_F

See Electrical table

11.0 mA at 125 °C

150 °C

DESCRIPTION

_RMmax.

The VS-11DQ... axial leaded Schottky rectifier has been

optimized for very low forward voltage drop, with moderate

leakage. Typical applications are in switching power

supplies, converters, freewheeling diodes, and reverse

battery protection.

T_Jmax.

Diode variation

E_AS

Single die

2.0 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

1.1

UNITS

Rectangular waveform

50/60

t_p= 5 μs sine

1 Apk, T_J= 125 °C

Range

150

V_F

0.53

T_J

- 40 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-11DQ05

VS-11DQ05-M3

VS-11DQ06

VS-11DQ06-M3 UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_R

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

See fig. 4

I_F(AV)

50 % duty cycle at T_C= 84 °C, rectangular waveform

1.1

Maximum peak one cycle

non-repetitive surge current

See fig. 6

5 µs sine or 3 µs rect. pulse

150

Following any rated

load condition and with

rated V_RRMapplied

I_FSM

10 ms sine or 6 ms rect. pulse

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 1 A, L = 4 mH

2.0

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

1.0

Revision: 21-Sep-11

Document Number: 93206

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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