Datasheet > 10-FY07LBA100S5-PG08J58T

10-FY07LBA100S5-PG08J58T

更新时间： 2024-04-09 18:59:43

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
21页	7052K
描述
IGBT S5 High speed and smooth switching Low gate charge Very low collector emitter saturation voltage

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10-FY07LBA100S5-PG08J58T

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Boost Diode

Static

1,5

1,8⁽¹⁾

600

V_F

I_R

Forward voltage

125

150

1,86

2,01

Reverse leakage current

Thermal

V_r= 1200 V

105

µA

λ_paste= 3,4 W/mK

(PSX)

Thermal resistance junction to sink⁽²⁾

Dynamic

0,55

K/W

R_th(j-s)

34,89

34,15

33,82

17,15

18,45

18,94

0,368

0,376

0,386

0,06

I_RM

Peak recovery current

125

150

t_rr

Reverse recovery time

125

150

di/dt=5216 A/µs

di/dt=5064 A/µs

di/dt=4989 A/µs

Q_r

Recovered charge

-5/15

350

125

150

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

0,061

0,063

5151,07

4561,2

4653,69

mWs

A/µs

(di_rf/dt)_max

125

150

08 Oct. 2023 / Revision 1

1 2 3 456 7 8...21

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