Datasheet > 10-FY07LBA100S5-PG08J58T

10-FY07LBA100S5-PG08J58T

更新时间： 2024-04-09 18:59:43

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
21页	7052K
描述
IGBT S5 High speed and smooth switching Low gate charge Very low collector emitter saturation voltage

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

10-FY07LBA100S5-PG08J58T 数据手册

浏览型号10-FY07LBA100S5-PG08J58T的Datasheet PDF文件第3页

浏览型号10-FY07LBA100S5-PG08J58T的Datasheet PDF文件第4页

浏览型号10-FY07LBA100S5-PG08J58T的Datasheet PDF文件第5页

浏览型号10-FY07LBA100S5-PG08J58T的Datasheet PDF文件第7页

浏览型号10-FY07LBA100S5-PG08J58T的Datasheet PDF文件第8页

10-FY07LBA100S5-PG08J58T

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Buck Diode

Static

1,07

1,5⁽¹⁾

V_F

I_R

Forward voltage

125

150

0,983

100

µA

Reverse leakage current

Thermal

V_r= 1600 V

150

λ_paste= 3,4 W/mK

(PSX)

Thermal resistance junction to sink⁽²⁾

0,68

K/W

R_th(j-s)

Capacitor (DC)

Static

DC bias voltage =

0 V

Capacitance

100

2,5

Tolerance

-10

Dissipation factor

f = 1 kHz

08 Oct. 2023 / Revision 1

1...3 4 567 8 9...21

下载PDF

与10-FY07LBA100S5-PG08J58T相关器件

型号	品牌	描述	获取价格	数据表
10-FY07NBA075S5-M505L58	VINCOTECH	High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt	获取价格
10-FY07NBA100S5-M506L58	VINCOTECH	High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt	获取价格
10-FY07NBA150S5-M506L98	VINCOTECH	High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt	获取价格
10-FY07NBA160RV-M506L78	VINCOTECH	High efficiency in hard switching and resonant topologies;High speed switching;Low gate ch	获取价格
10-FY07NBA225S502-M507L98	VINCOTECH	High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt	获取价格
10-FY07NIA100S503-M515F58	VINCOTECH	High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt	获取价格