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10-FY07NBA100S5-M506L58 PDF预览

10-FY07NBA100S5-M506L58

更新时间: 2023-09-03 20:31:23
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
20页 1628K
描述
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage

10-FY07NBA100S5-M506L58 数据手册

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10ꢀFY07NBA100S5ꢀM506L58  
datasheet  
650 V / 100 A  
flow BOOST1 symmetric  
Features  
flow 1 12 mm housing  
● High efficient and compact symmetric booster  
● High switching frequency and low inductive design  
● Low losses with TRENCHSTOP™ S5 IGBT  
● Integrated temperature sensor  
Schematic  
Target applications  
● Solar  
● UPS  
● Power Supply  
Types  
● 10ꢀFY07NBA100S5ꢀM506L58  
Maximum Ratings  
T
j
= 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Boost Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collectorꢀemitter voltage  
650  
90  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gateꢀemitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
300  
133  
±20  
175  
A
W
V
Maximum junction temperature  
°C  
Copyright Vincotech  
1
10 Jul. 2017 / Revision 1  

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