Datasheet > 10-FY07NIB080SM03-L095F03

10-FY07NIB080SM03-L095F03

更新时间： 2023-06-19 15:37:31

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
11页	477K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

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10-FY07ZAB075SM-L515B08

target datasheet

flow RPI 1

650 V / 75 A

Features

flow 1 12mm housing

● High integration level of Rectifier, PFC and Inverter

● High efficiency input rectifier

● Wide input voltage range rated PFC

● Dual PFC with high efficiency, fast IGBT H5 +

ultraꢀfast Si diode

● High efficiency HꢀBridge inverter with fast IGBT H5

● Temperature sensor

Schematic

Target applications

● Welding

● Charger

Types

● 10ꢀFY07ZAB075SMꢀL515B08

Maximum Ratings

Tj=25°C, unless otherwise specified

Conditions

Parameter

Symbol

Value

Unit

Rectifier Diode

Peak Repetitive Reverse Voltage

V_RRM

I_F

1600

Continuous (direct) forward current

Surge (nonꢀrepetitive) forward current

Surge current capability

T_j= T_jmax

T_S= 80°C

50 Hz Single Half Sine Wave

t_p= 10 ms 50 Hz sine

T_j= T_jmax

490

1200

I _FSM

= 150°C

T_j

A²s

I ²t

P_tot

Total power dissipation

T_S= 80°C

Maximum Junction Temperature

T_jmax

150

°C

26 Aug. 2015 / Revision 1

12 3 4 5 6 7...11

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