Datasheet > 10-FY07LBA100S5-PG08J58T

10-FY07LBA100S5-PG08J58T

更新时间： 2024-04-09 18:59:43

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
21页	7052K
描述
IGBT S5 High speed and smooth switching Low gate charge Very low collector emitter saturation voltage

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10-FY07LBA100S5-PG08J58T

datasheet

Boost Switch Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

300

V_GE

7 V

8 V

250

200

150

100

250

200

150

100

9 V

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

0,0

0,5

1,0

1,5

2,0

2,5

3,0

0,5

1,0

1,5

2,0

2,5

3,0

_CE(V)

V_CE(V)

t_p

250

μs

250

150

μs

°C

25 °C

V_GE

T_j=

125 °C

150 °C

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

100

-1

-2

0,5

0,2

0,1

-3

0,05

0,02

0,01

0,005

-4

-5

-4

-3

-2

-1

t_p(s)

_GE(V)

t_p

250

μs

D =

t_p/ T

0,742

25 °C

V_CE

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

8,10E-02

1,65E-01

3,32E-01

1,23E-01

4,07E-02

3,11E+00

4,78E-01

7,07E-02

1,10E-02

1,15E-03

08 Oct. 2023 / Revision 1

1...5 6 789 10 11...21

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