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10-FY07NBA160RV-M506L78 PDF预览

10-FY07NBA160RV-M506L78

更新时间: 2023-09-03 20:31:20
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
18页 1614K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

10-FY07NBA160RV-M506L78 数据手册

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10-FY07NBA160RV-M506L78  
datasheet  
flowBOOST 1 symmetric  
650 V / 160 A  
Features  
flow 1 12 mm housing  
● High efficient and compact symmetric booster  
● High switching frequency and low inductive design  
● Low losses due to latest IGBT technology  
● Integrated temperature sensor  
 
 
Schematic  
Target applications  
● Solar Inverters  
● UPS  
Types  
● 10-FY07NBA160RV-M506L78  
Maximum Ratings  
T
j
= 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Boost Switch  
VCES  
IC  
Collector-emitter voltage  
650  
110  
640  
171  
±30  
2
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 25 °C  
ICRM  
Ptot  
VGES  
tSC  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
A
W
V
Short circuit ratings  
VGE = 15 V  
Vcc = 360 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
175  
Copyright Vincotech  
1
18 May. 2018 / Revision 1  

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