Datasheet > 10-FY07LBA100S5-PG08J58T

10-FY07LBA100S5-PG08J58T

更新时间： 2024-04-09 18:59:43

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
21页	7052K
描述
IGBT S5 High speed and smooth switching Low gate charge Very low collector emitter saturation voltage

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10-FY07LBA100S5-PG08J58T

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Boost Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_CE= V_GE

0,001

100

3,2

4,8

1,41

1,55

1,58

1,75⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

650

100

200

µA

None

6200

176

C_ies

C_oes

C_res

Q_g

Output capacitance

f = 1 Mhz

Reverse transfer capacitance

Gate charge

V_CC= 520 V

100

240

Thermal

λ_paste= 3,4 W/mK

(PSX)

Thermal resistance junction to sink⁽²⁾

Dynamic

0,74

K/W

R_th(j-s)

53,59

53,35

53,2

t_d(on)

Turn-on delay time

Rise time

125

150

14,83

16,58

17,11

151,88

174,11

180,22

13,49

28,66

t_r

125

150

R_gon= 8 Ω

R_goff= 8 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

-5/15

350

t_f

125

150

Q_rFWD=0,368 µC

Q_rFWD=0,376 µC

Q_rFWD=0,386 µC

0,598

0,655

0,671

0,819

1,32

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

mWs

E_off

125

150

1,46

08 Oct. 2023 / Revision 1

1 2 345 6 7...21

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