Datasheet > 10-FY07LBA100S5-PG08J58T

10-FY07LBA100S5-PG08J58T

更新时间： 2024-04-09 18:59:43

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
21页	7052K
描述
IGBT S5 High speed and smooth switching Low gate charge Very low collector emitter saturation voltage

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10-FY07LBA100S5-PG08J58T

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Boost Switch

V_CES

Collector-emitter voltage

650

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

300

128

±20

175

P_tot

V_GES

Gate-emitter voltage

T_jmax

Maximum junction temperature

°C

Boost Diode

V_RRM

Peak repetitive reverse voltage

1200

I_F

Forward current (DC current)

Repetitive peak forward current

Surge (non-repetitive) forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

I_FSM

P_tot

t_plimited by T_jmax

273

330

172

175

Single Half Sine Wave,

t_p= 10 ms

T_j= 110 °C

T_s= 80 °C

T_j= T_jmax

°C

T_jmax

Maximum junction temperature

Buck Diode

V_RRM

Peak repetitive reverse voltage

1600

I_F

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

600

1800

103

150

Single Half Sine Wave,

t_p= 10 ms

A²s

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

Capacitor (DC)

V_MAX

Maximum DC voltage

630

T_op

Operation Temperature

-55 ... 125

°C

08 Oct. 2023 / Revision 1

123 4 5 6 7...21

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