Datasheet > 10-EY122PA008ME01-LU38F06T

10-EY122PA008ME01-LU38F06T

更新时间： 2024-04-24 09:03:43

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	6892K
描述
SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up

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10-EY122PA008ME01-LU38F06T

datasheet

Half-Bridge Switch Characteristics

figure 1.

MOSFET

figure 2.

MOSFET

Typical output characteristics

I_D= f(V_DS

)

I_D= f(V_DS)

300

250

200

150

100

V_GS

-4 V

-2 V

0 V

250

200

150

100

2 V

4 V

6 V

8 V

10 V

12 V

14 V

16 V

18 V

20 V

-50

-100

-150

-200

-250

-300

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

_DS(V)

-10,0 -7,5

-5,0 -2,5

0,0

2,5

5,0

7,5

10,0 12,5

V_DS(V)

t_p

250

μs

250

150

μs

°C

25 °C

V_GS

T_j=

125 °C

150 °C

T_j:

V_GSfrom -4 V to 20 V in steps of 2 V

figure 3.

MOSFET

figure 4.

MOSFET

Typical transfer characteristics

Typical reverse drain current characteristics

I_D= f(V_GS

)

I_SD= f(V_SD)

350

300

250

200

150

100

250

200

150

100

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

_GS(V)

V_SD(V)

t_p

250

μs

250

μs

25 °C

V_DS

V_GS=

125 °C

150 °C

125 °C

150 °C

T_j:

13 Sep. 2023 / Revision 1

1...3 4 567 8 9...17

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