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10-EY12PNA032ME02-L188C03T PDF预览

10-EY12PNA032ME02-L188C03T

更新时间: 2024-11-21 11:08:19
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
18页 6754K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

10-EY12PNA032ME02-L188C03T 数据手册

 浏览型号10-EY12PNA032ME02-L188C03T的Datasheet PDF文件第2页浏览型号10-EY12PNA032ME02-L188C03T的Datasheet PDF文件第3页浏览型号10-EY12PNA032ME02-L188C03T的Datasheet PDF文件第4页浏览型号10-EY12PNA032ME02-L188C03T的Datasheet PDF文件第5页浏览型号10-EY12PNA032ME02-L188C03T的Datasheet PDF文件第6页浏览型号10-EY12PNA032ME02-L188C03T的Datasheet PDF文件第7页 
10-EY12PNA032ME02-L188C03T  
datasheet  
flowPIM E2  
1200 V / 32 mΩ  
Topology features  
flow E2 12 mm housing  
● Converter+Inverter  
● Open Emitter configuration  
● SiC MOSFET  
● Temperature sensor  
Component features  
● High Blocking Voltage with low drain source on state resistance  
● High speed SiC-MOSFET technology  
● Resistant to Latch-up  
Housing features  
● Base isolation: Al2O3  
● Convex shaped substrate for superior thermal contact  
● Compact housing  
● CTI600 housing material  
● Thermo-mechanical push-and-pull force relief  
● Press-fit pin  
Schematic  
● Reliable cold welding connection  
Target applications  
● Embedded Drives  
● General Purpose Drives  
● Heat Pumps  
● HVAC  
● Industrial Drives  
Types  
● 10-EY12PNA032ME02-L188C03T  
Copyright Vincotech  
1
12 Jul. 2022 / Revision 1  

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