Datasheet > 10-EY12NMA011ME30-LS28F18T

10-EY12NMA011ME30-LS28F18T

更新时间： 2023-09-03 20:34:02

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
25页	8602K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-EY12NMA011ME30-LS28F18T 数据手册

10-EY12NMA011ME30-LS28F18T

datasheet

flowMNPC E2

1200 V / 11 mΩ

Features

flow E2 12 mm housing

● Three-level high efficient topology

● High frequency SIC MOSFET

● Compact and low inductive design

● Integrated NTC

Schematic

Target applications

● Power Supply

Types

● 10-EY12NMA011ME30-LS28F18T

12 Oct. 2021 / Revision 1

12 3 4 5 6 7...25

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