Datasheet > 10-EY122PA008ME01-LU38F06T

10-EY122PA008ME01-LU38F06T

更新时间： 2024-04-24 09:03:43

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	6892K
描述
SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up

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10-EY122PA008ME01-LU38F06T

datasheet

Half-Bridge Switch Characteristics

figure 5.

MOSFET

Transient thermal impedance as a function of pulse width

Z_th(j-s)= f(t_p)

-1

-2

0,5

0,2

-3

0,1

0,05

0,02

0,01

0,005

-4

-5

-4

-3

-2

-1

t_p(s)

D =

t_p/ T

0,234

R_th(j-s)

K/W

MOSFET thermal model values

R (K/W)

τ (s)

2,13E-02

3,90E-02

9,74E-02

5,19E-02

2,39E-02

4,84E+00

7,93E-01

6,58E-02

6,77E-03

5,91E-04

13 Sep. 2023 / Revision 1

1...4 5 678 9 10...17

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