Datasheet > 10-EY124PA016ME-LP49F18T

10-EY124PA016ME-LP49F18T

更新时间： 2023-09-03 20:25:18

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
22页	8778K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-EY124PA016ME-LP49F18T 数据手册

10-EY124PA016ME-LP49F18T

datasheet

fastPACK E2 SiC

1200 V / 16 mΩ

Features

flow E2 12 mm housing

● Compact and low inductive design

● High frequency SiC MOSFET

● Integrated NTC

Schematic

Target applications

● Charging Stations

● Power Supply

● Welding & Cutting

Types

● 10-EY124PA016ME-LP49F18T

31 Mar. 2020 / Revision 1

12 3 4 5 6 7...22

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