型号 | 品牌 | 获取价格 | 描述 | 数据表 |
10-EY126PB011ME-PJ19F18T | VINCOTECH |
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SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC | |
10-EY126PB020MS02-PJ17F78T | VINCOTECH |
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SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC | |
10-EY126PB021ME-PJ17F18T | VINCOTECH |
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SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC | |
10-EY126RA040CD-PJ17J98T | VINCOTECH |
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SiC diode No diode recovery losses Very fast switching | |
10-EY12NMA011ME30-LS28F18T | VINCOTECH |
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High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET tech | |
10-EY12NMA016ME-LS28F16T | VINCOTECH |
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High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET tech | |
10-EY12PMA015M7-L186A78T | VINCOTECH |
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Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem | |
10-EY12PMA015SC-L186A48T | VINCOTECH |
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Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem | |
10-EY12PMA025M7-L187A78T | VINCOTECH |
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Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem | |
10-EY12PMA025SC-L187A48T | VINCOTECH |
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Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem |