Datasheet > 10-EY126PB011ME-PJ19F18T

10-EY126PB011ME-PJ19F18T

更新时间： 2024-11-10 17:01:07

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	7053K
描述
SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up

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10-EY126PB011ME-PJ19F18T 数据手册

10-EY126PB011ME-PJ19F18T

datasheet

flowPACK E2 SiC

1200 V / 11 mΩ

Topology features

flow E2 12 mm housing

● 3ph Inverter

● Low and high side Kelvin Emitter for improved switching

performance

● MOSFET

● Open Emitter configuration

● Temperature sensor

Component features

● High Blocking Voltage with low drain source on state resistance

● High speed SiC-MOSFET technology

● Resistant to Latch-up

Housing features

● Base isolation: Al₂O₃

● Convex shaped substrate for superior thermal contact

● Compact housing

● CTI600 housing material

Schematic

● Thermo-mechanical push-and-pull force relief

● Press-fit pin

● Reliable cold welding connection

Target applications

● Charging Stations

● Elevator Drives

● Embedded Drives

● Industrial Drives

● Servo Drives

Types

● 10-EY126PB011ME-PJ19F18T

15 Dec. 2023 / Revision 1

12 3 4 5 6 7...17

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