Datasheet > 10-EY122PA008ME01-LU38F06T

10-EY122PA008ME01-LU38F06T

更新时间： 2024-04-24 09:03:43

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	6892K
描述
SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up

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10-EY122PA008ME01-LU38F06T

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Half-Bridge Switch

Static

5,6

1,8

9,11

10,7

11,7

10,4⁽¹⁾

r_DS(on)

Drain-source on-state resistance

160

125

150

mΩ

V_GS(th)

I_GSS

I_DSS

r_g

Gate-source threshold voltage

Gate to Source Leakage Current

Zero Gate Voltage Drain Current

Internal gate resistance

V_DS= V_GS

0,046

2,5

3,6

1000

µA

Ω

1200

0,425

472

13428

516

Q_g

Gate charge

-4/15

800

160

C_iss

C_oss

C_rss

V_SD

Short-circuit input capacitance

Short-circuit output capacitance

Reverse transfer capacitance

Diode forward voltage

f = 100 kHz

1000

4,6

Thermal

λ_paste= 3,4 W/mK

(PSX)

Thermal resistance junction to sink⁽²⁾

0,23

K/W

R_th(j-s)

13 Sep. 2023 / Revision 1

1 234 5 6 7...17

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