Datasheet > 10-EY122PA008ME01-LU38F06T

10-EY122PA008ME01-LU38F06T

更新时间： 2024-04-24 09:03:43

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	6892K
描述
SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up

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10-EY122PA008ME01-LU38F06T

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Half-Bridge Switch

V_DSS

Drain-source voltage

1200

184

I_D

Drain current (DC current)

Peak drain current

T_j= T_jmax

T_s= 80 °C

I_DM

t_plimited by T_jmax

T_j= T_jmax

480

P_tot

Total power dissipation

407

-4 / 15

-8 / 19

175

V_GSS

Gate-source voltage

dynamic

T_jmax

Maximum Junction Temperature

°C

Module Properties

Thermal Properties

T_stg

T_jop

Storage temperature

-40…+125

°C

Operation temperature under switching

condition

-40…+(T_jmax- 25)

Isolation Properties

Isolation voltage

Creepage distance

Clearance

V_isol

DC Test Voltage*

AC Voltage

t_p= 2 s

6000

3500

>12,7

9,05

t_p= 1 min

Comparative Tracking Index

*100 % tested in production

CTI

≥ 600

13 Sep. 2023 / Revision 1

123 4 5 6 7...17

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